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Title: Structural and physical properties of transparent conducting, amorphous Zn-doped SnO{sub 2} films

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.4861378· OSTI ID:22275698
; ; ; ;  [1]
  1. Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208 (United States)

The structural and physical properties of conducting amorphous Zn-doped SnO{sub 2} (a-ZTO) films, prepared by pulsed laser deposition, were investigated as functions of oxygen deposition pressure (pO{sub 2}), composition, and thermal annealing. X-ray scattering and X-ray absorption spectroscopy measurements reveal that at higher pO{sub 2}, the a-ZTO films are highly transparent and have a structural framework similar to that found in crystalline (c-), rutile SnO{sub 2} in which the Sn{sup 4+} ion is octahedrally coordinated by 6 O{sup 2−} ions. The Sn{sup 4+} ion in these films however has a coordination number (CN) smaller by 2%–3% than that in c-SnO{sub 2}, indicating the presence of oxygen vacancies, which are the likely source of charge carriers. At lower pO{sub 2}, the a-ZTO films show a brownish tint and contain some 4-fold coordinated Sn{sup 2+} ions. Under no circumstances is the CN around the Zn{sup 2+} ion larger than 4, and the Zn-O bond is shorter than the Sn-O bond by 0.07 Å. The addition of Zn has no impact on the electroneutrality but improves significantly the thermal stability of the films. Structural changes due to pO{sub 2}, composition, and thermal annealing account well for the changes in the physical properties of a-ZTO films.

OSTI ID:
22275698
Journal Information:
Journal of Applied Physics, Vol. 115, Issue 3; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
Country of Publication:
United States
Language:
English