Role of quantum confinement in luminescence efficiency of group IV nanostructures
Journal Article
·
· Journal of Applied Physics
- Measurement Science and Standards, National Research Council, Ottawa, Ontario K1A 0R6 (Canada)
- Departamento de Física, Universidade Federal do Ceará, Caixa Postal 6030, Campus do Pici, 60455-760 Fortaleza, Ceará (Brazil)
- Institut Matériaux Microélectronique Nanosciences de Provence, UMR CNRS, 6137, Avenue Normandie Niemen, 13397 Marseille Cedex 20 (France)
- Laboratoire Chimie de la Matière Condensée de Paris, UMR-7574 UPMC-CNRS, Collège de France, 11, place Marcelin Berthelot, 75231 Paris (France)
Experimental results obtained previously for the photoluminescence efficiency (PL{sub eff}) of Ge quantum dots (QDs) are theoretically studied. A log-log plot of PL{sub eff} versus QD diameter (D) resulted in an identical slope for each Ge QD sample only when E{sub G}∼(D{sup 2}+D){sup −1}. We identified that above D ≈ 6.2 nm: E{sub G}∼D{sup −1} due to a changing effective mass (EM), while below D ≈ 4.6 nm: E{sub G}∼D{sup −2} due to electron/hole confinement. We propose that as the QD size is initially reduced, the EM is reduced, which increases the Bohr radius and interface scattering until eventually pure quantum confinement effects dominate at small D.
- OSTI ID:
- 22275617
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 4 Vol. 115; ISSN JAPIAU; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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