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Title: Magnetic and microwave properties of U-type hexaferrite films with high remanence and low ferromagnetic resonance linewidth

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.4854935· OSTI ID:22273925
; ; ; ;  [1]
  1. Center for Microwave Magnetic Materials and Integrated Circuits, Northeastern University, Boston, Massachusetts 02115, USA and The Department of Electrical and Computer Engineering, Northeastern University, Boston, Massachusetts 02115 (United States)

U-type barium hexaferrite films (Ba{sub 4}Ni{sub 1.4}Co{sub 0.6}Fe{sub 36}O{sub 60}) were deposited on (0001) sapphire substrates by pulsed laser deposition. Microstructure and magnetic properties of the films were characterized by X-ray diffraction, scanning electron microscopy and vibrating sample magnetometry. Ferromagnetic resonance (FMR) measurements were performed at X-band. The results indicate an anisotropy field of ∼8 kOe, and the saturation magnetization (4πM{sub s}) of ∼3.6 kG. An optimal post-deposition annealing of films results in a strong (0 0 n) crystallographic texture and a high hysteresis loop squareness (M{sub r}/M{sub s} = 92%) leading to self biased properties. Furthermore, the highly self-biased ferrite films exhibited an FMR linewidth of ∼200 Oe. The U-type hexaferrite films having low microwave loss, low magnetic anisotropy field, and high squareness are a suitable alternative to Sc or In doped BaM ferrites that have been the choice material for self-biased microwave devices at X-band frequencies.

OSTI ID:
22273925
Journal Information:
Journal of Applied Physics, Vol. 115, Issue 17; Conference: 55. annual conference on magnetism and magnetic materials, Atlanta, GA (United States), 14-18 Nov 2010; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
Country of Publication:
United States
Language:
English