Temperature driven transition from giant to tunneling magneto-resistance in Fe{sub 3}O{sub 4}/Alq{sub 3}/Co spin Valve: Role of Verwey transition of Fe{sub 3}O{sub 4}

Journal Article · Wed May 07 04:00:00 EDT 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4862845· OSTI ID:22273862

Rawat, R.; Potdar, S. R.; Choudhary, R. J.; Banerjee, A. ^[1]

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1. UGC-DAE Consortium for Scientific Research (CSR), University Campus, Khandwa Road, Indore 452 001 (India)

We demonstrate interface energy level engineering, exploiting the modification in energy band structure across Verwey transition temperature (T{sub V}) of Fe{sub 3}O{sub 4}, in a Fe{sub 3}O{sub 4}(111)/Alq{sub 3}/Co spin-valve (SV). I-V characteristics exhibit a transition in conduction mode from carrier injection to tunneling across T{sub V} of Fe{sub 3}O{sub 4} electrode. Both giant magneto-resistance (GMR) and tunneling MR (TMR) have been observed in a single SV, below and above T{sub V}, respectively. We have achieved room-temperature SV operation in our device. We believe that the tuning of charge gap at Fermi level across T{sub V} resulting in a corresponding tuning of conduction mode and a unique cross over from GMR to TMR.

• OSTI ID: 22273862
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 17 Vol. 115; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM COMPOUNDS
COBALT
ELECTRODES
ELECTRONIC STRUCTURE
FERMI LEVEL
FERRITES
HETEROJUNCTIONS
INTERFACES
IRON OXIDES
MAGNETORESISTANCE
ORGANIC COMPOUNDS
SPIN
TEMPERATURE DEPENDENCE
TRANSITION TEMPERATURE
TUNNEL EFFECT
VALVES