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Title: Ferroelectric and ferromagnetic properties of epitaxial BiFeO{sub 3}-BiMnO{sub 3} films on ion-beam-assisted deposited TiN buffered flexible Hastelloy

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.4869438· OSTI ID:22273720
;  [1]; ;  [2]
  1. Los Alamos National Laboratory, Center for Integrated Nanotechnologies, Division of Materials Physics and Applications, Los Alamos, New Mexico 87545 (United States)
  2. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China)

Growth of multifunctional thin films on flexible substrates is of great technological significance since such a platform is needed for flexible electronics. In this study, we report the growth of biaxially aligned (BiFeO{sub 3}){sub 0.5}:(BiMnO{sub 3}){sub 0.5} [BFO-BMO] films on polycrystalline Hastelloy by using a biaxially aligned TiN as a seed layer deposited by ion-beam-assisted deposited and a La{sub 0.7}Sr{sub 0.3}MnO{sub 3} (LSMO) as a buffer layer deposited by pulsed laser deposition. The LSMO is used not only as a buffer layer but also as the bottom electrode of the BFO-BMO films. X-ray diffraction showed that the BFO-BMO films are biaxially oriented along both in-plane and out-of-plane directions. The BFO-BMO films on flexible metal substrates showed a polarization of 22.9 μC/cm{sup 2}. The magnetization of the BFO-BMO/LSMO is 62 emu/cc at room temperature.

OSTI ID:
22273720
Journal Information:
Journal of Applied Physics, Vol. 115, Issue 17; Conference: 55. annual conference on magnetism and magnetic materials, Atlanta, GA (United States), 14-18 Nov 2010; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
Country of Publication:
United States
Language:
English