Single-step in-situ synthesis and optical properties of ZnSe nanostructured dielectric nanocomposites

Journal Article · Mon Apr 07 00:00:00 EDT 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4870292· OSTI ID:22273690

Dey, Chirantan; Rahaman Molla, Atiar; Tarafder, Anal; Karmakar, Basudeb ^[1]; Kr Mishra, Manish; De, Goutam ^[2]; Goswami, Madhumita; Kothiyal, G. P. ^[3]

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1. CSIR-Central Glass and Ceramic Research Institute, Glass Science and Technology Section, Glass Division, 196, Raja S. C. Mullick Road, 700032 Kolkata (India)
2. CSIR-Central Glass and Ceramic Research Institute, Nano-Structured Materials Division, 196, Raja S. C. Mullick Road, 700032 Kolkata (India)
3. Glass and Advanced Ceramics Division, Bhaba Atomic Research Centre, Trombay, 400085 Mumbai (India)

This work provides the evidence of visible red photoluminescent light emission from ZnSe nanocrystals (NCs) grown within a dielectric (borosilicate glass) matrix synthesized by a single step in-situ technique for the first time and the NC sizes were controlled by varying only the concentration of ZnSe in glass matrix. The ZnSe NCs were investigated by UV-Vis optical absorption spectroscopy, Raman spectroscopy, and transmission electron microscopy (TEM). The sizes of the ZnSe NCs estimated from the TEM images are found to alter in the range of 2–53 nm. Their smaller sizes of the NCs were also calculated by using the optical absorption spectra and the effective mass approximation model. The band gap enlargements both for carrier and exciton confinements were evaluated and found to be changed in the range of 0–1.0 eV. The Raman spectroscopic studies showed blue shifted Raman peaks of ZnSe at 295 and 315 cm{sup −1} indicating phonon confinement effect as well as compressive stress effect on the surface atoms of the NCs. Red photoluminescence in ZnSe-glass nanocomposite reveals a broad multiple-peak structure due to overlapping of emission from NC size related electron-hole recombination (∼707 nm) and emissions from defects to traps, which were formed due to Se and Zn vacancies signifying potential application in photonics.

• OSTI ID: 22273690
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 13 Vol. 115; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
77 NANOSCIENCE AND NANOTECHNOLOGY
ABSORPTION SPECTROSCOPY
BOROSILICATE GLASS
CHARGE CARRIERS
COMPOSITE MATERIALS
CONCENTRATION RATIO
DIELECTRIC MATERIALS
EFFECTIVE MASS
HOLES
NANOSTRUCTURES
OPTICAL PROPERTIES
PHONONS
PHOTOLUMINESCENCE
RAMAN SPECTROSCOPY
RECOMBINATION
STRESSES
TRANSMISSION ELECTRON MICROSCOPY
VACANCIES
ZINC SELENIDES