Effect of La{sup 3+} substitution with Gd{sup 3+} on the resistive switching properties of La{sub 0.7}Sr{sub 0.3}MnO{sub 3} thin films

Journal Article · Mon May 12 04:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4876115· OSTI ID:22273413

Lee, Hong-Sub; Park, Chang-Sun; Park, Hyung-Ho ^[1]

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1. Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749 (Korea, Republic of)

This study demonstrated that the resistive switching voltage of perovskite manganite material could be controlled by A-site cation substitution in “A” MnO{sub 3} perovskite manganite structure. A partial substitution of La{sup 3+} in La{sub 0.7}Sr{sub 0.3}MnO{sub 3} with smaller cation Gd{sup 3+} induced A-site vacancy of the largest Sr{sup 2+} cation with surface segregation of SrO{sub y} due to ionic size mismatch, and the induced vacancies reduced migration energy barrier. The operating voltage decreased from 3.5 V to 2.5 V due to a favorable condition for electrochemical migration and redox of oxygen ions. Moreover, surface-segregated SrO{sub y} was enhanced with Gd-substitution and the SrO{sub y} reduced Schottky-like barrier height and resistive switching ratio from the potential drop and screening effect. The relationship between A-site vacancy generation resulting in surface segregation of SrO{sub y} and resistive switching behavior was also investigated by energy resolved x-ray photoelectron spectroscopy, O 1s near edge x-ray absorption spectroscopy, and current voltage measurement.

• OSTI ID: 22273413
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 19 Vol. 104; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ABSORPTION SPECTROSCOPY
GADOLINIUM IONS
LANTHANUM IONS
MANGANESE OXIDES
PEROVSKITE
STRONTIUM OXIDES
THIN FILMS
VACANCIES
X-RAY PHOTOELECTRON SPECTROSCOPY