Exciton-dominant electroluminescence from a diode of monolayer MoS{sub 2}

Journal Article · Mon May 12 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4875959· OSTI ID:22273408

Ye, Yu; Ye, Ziliang; Gharghi, Majid; Zhu, Hanyu; Wang, Yuan ^[1]; Zhao, Mervin; Yin, Xiaobo; Zhang, Xiang ^[1]

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1. NSF Nanoscale Science and Engineering Center, University of California, 3112 Etcheverry Hall, Berkeley, California 94720 (United States)

In two-dimensional monolayer MoS{sub 2}, excitons dominate the absorption and emission properties. However, the low electroluminescent efficiency and signal-to-noise ratio limit our understanding of the excitonic behavior of electroluminescence. Here, we study the microscopic origin of the electroluminescence from a diode of monolayer MoS{sub 2} fabricated on a heavily p-type doped silicon substrate. Direct and bound-exciton related recombination processes are identified from the electroluminescence. At a high electron-hole pair injection rate, Auger recombination of the exciton-exciton annihilation of the bound exciton emission is observed at room temperature. Moreover, the efficient electrical injection demonstrated here allows for the observation of a higher energy exciton peak of 2.255 eV in the monolayer MoS{sub 2} diode, attributed to the excited exciton state of a direct-exciton transition.

• OSTI ID: 22273408
• Journal Information: Applied Physics Letters, Vol. 104, Issue 19; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
DOPED MATERIALS
ELECTROLUMINESCENCE
EXCITONS
MOLYBDENUM SULFIDES