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Title: Colossal anisotropic resistivity and oriented magnetic domains in strained La{sub 0.325}Pr{sub 0.3}Ca{sub 0.375}MnO{sub 3} films

Abstract

Magnetic and resistive anisotropies have been studied for the La{sub 0.325}Pr{sub 0.3}Ca{sub 0.375}MnO{sub 3} films with different thicknesses grown on low symmetric (011)-oriented (LaAlO{sub 3}){sub 0.3}(SrAl{sub 0.5}Ta{sub 0.5}O{sub 3}){sub 0.7} substrates. In the magnetic and electronic phase separation region, a colossal anisotropic resistivity (AR) of ∼10{sup 5}% and an anomalous large anisotropic magnetoresistance can be observed for 30 nm film. However, for 120 nm film, the maximum AR decreases significantly (∼2 × 10{sup 3}%) due to strain relaxation. The colossal AR is strongly associated with the oriented formation of magnetic domains, and the features of the strain effects are believed to be useful for the design of artificial materials and devices.

Authors:
; ; ; ; ;  [1]; ;  [1];  [2]
  1. Hefei National Laboratory for Physical Sciences at Microscale, Department of Physics, University of Science and Technology of China, Hefei 230026 (China)
  2. High Magnetic Field Laboratory, Chinese Academy of Sciences and University of Science and Technology of China, Hefei 230031 (China)
Publication Date:
OSTI Identifier:
22273384
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 104; Journal Issue: 20; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINATES; FILMS; LANTHANUM COMPOUNDS; MAGNETORESISTANCE; MATERIALS; SUBSTRATES

Citation Formats

Jiang, Tao, Yang, Shengwei, Liu, Yukuai, Zhao, Wenbo, Feng, Lei, Li, Xiaoguang, Zhou, Haibiao, Lu, Qingyou, High Magnetic Field Laboratory, Chinese Academy of Sciences and University of Science and Technology of China, Hefei 230031, and Hou, Yubin. Colossal anisotropic resistivity and oriented magnetic domains in strained La{sub 0.325}Pr{sub 0.3}Ca{sub 0.375}MnO{sub 3} films. United States: N. p., 2014. Web. doi:10.1063/1.4878557.
Jiang, Tao, Yang, Shengwei, Liu, Yukuai, Zhao, Wenbo, Feng, Lei, Li, Xiaoguang, Zhou, Haibiao, Lu, Qingyou, High Magnetic Field Laboratory, Chinese Academy of Sciences and University of Science and Technology of China, Hefei 230031, & Hou, Yubin. Colossal anisotropic resistivity and oriented magnetic domains in strained La{sub 0.325}Pr{sub 0.3}Ca{sub 0.375}MnO{sub 3} films. United States. https://doi.org/10.1063/1.4878557
Jiang, Tao, Yang, Shengwei, Liu, Yukuai, Zhao, Wenbo, Feng, Lei, Li, Xiaoguang, Zhou, Haibiao, Lu, Qingyou, High Magnetic Field Laboratory, Chinese Academy of Sciences and University of Science and Technology of China, Hefei 230031, and Hou, Yubin. Mon . "Colossal anisotropic resistivity and oriented magnetic domains in strained La{sub 0.325}Pr{sub 0.3}Ca{sub 0.375}MnO{sub 3} films". United States. https://doi.org/10.1063/1.4878557.
@article{osti_22273384,
title = {Colossal anisotropic resistivity and oriented magnetic domains in strained La{sub 0.325}Pr{sub 0.3}Ca{sub 0.375}MnO{sub 3} films},
author = {Jiang, Tao and Yang, Shengwei and Liu, Yukuai and Zhao, Wenbo and Feng, Lei and Li, Xiaoguang and Zhou, Haibiao and Lu, Qingyou and High Magnetic Field Laboratory, Chinese Academy of Sciences and University of Science and Technology of China, Hefei 230031 and Hou, Yubin},
abstractNote = {Magnetic and resistive anisotropies have been studied for the La{sub 0.325}Pr{sub 0.3}Ca{sub 0.375}MnO{sub 3} films with different thicknesses grown on low symmetric (011)-oriented (LaAlO{sub 3}){sub 0.3}(SrAl{sub 0.5}Ta{sub 0.5}O{sub 3}){sub 0.7} substrates. In the magnetic and electronic phase separation region, a colossal anisotropic resistivity (AR) of ∼10{sup 5}% and an anomalous large anisotropic magnetoresistance can be observed for 30 nm film. However, for 120 nm film, the maximum AR decreases significantly (∼2 × 10{sup 3}%) due to strain relaxation. The colossal AR is strongly associated with the oriented formation of magnetic domains, and the features of the strain effects are believed to be useful for the design of artificial materials and devices.},
doi = {10.1063/1.4878557},
url = {https://www.osti.gov/biblio/22273384}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 20,
volume = 104,
place = {United States},
year = {2014},
month = {5}
}