Evolution of surface stress during oxygen exposure of clean Si(111), Si(100), and amorphous Si surfaces
- Max Planck Institute for Intelligent Systems (formerly Max Planck Institute for Metals Research), Heisenbergstraße 3, D-70569 Stuttgart (Germany)
The evolutions of the surface stress of Si(111)-7 × 7, Si(100)-2 × 1, and a-Si surfaces upon oxygen exposure at pO{sub 2} = 1 × 10{sup −4} Pa and room temperature have been investigated in a comparative manner using a specimen-curvature based technique. To this end, a generally applicable, dedicated set of experiments has been devised and performed to deduce and correct for the surface stress change owing to oxygen reaction(s) at the (poorly-defined) back face of the specimen only. On this basis, it could be demonstrated that exposure of clean Si(111)-7 × 7, Si(100)-2 × 1 and a-Si surfaces to pure oxygen gas results in compressive surface stress changes for all three surfaces due to the incorporation of oxygen into Si backbonds. The measured surface stress change decreases with decreasing atomic packing density at the clean Si surfaces, which complies well with the less-densily packed Si surface regions containing more free volume for the accommodation of adsorbed O atoms.
- OSTI ID:
- 22271271
- Journal Information:
- Journal of Applied Physics, Vol. 115, Issue 2; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
Similar Records
Initial and secondary oxidation products on the Si(111)-(7 × 7) surface identified by atomic force microscopy and first principles calculations
Surface structure and surface electronic states related to plasma cleaning of Si and Ge