Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Low temperature magneto-photoluminescence of GaAsBi /GaAs quantum well heterostructures

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.4869803· OSTI ID:22271134
;  [1]; ;  [2];  [1]; ;  [3];  [4]
  1. Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701 (United States)
  2. Departamento de Física, Universidade Federal de São Carlos, 13.565-905,São Carlos, São Paulo (Brazil)
  3. Department of Electrical Engineering, University of Arkansas, Fayetteville, Arkansas 72701 (United States)
  4. Institute of Semiconductor Physics, National Academy of Sciences, Kiev-03028 (Ukraine)

Strong optical anisotropy is observed in the emission from a GaAs{sub 1−x}Bi{sub x} (x ∼ 0.04) quantum well grown by low temperature molecular beam epitaxy on (001) GaAs by means of low temperature magneto-photoluminescence (MPL) taken at 2 K in Faraday geometry for magnetic fields, B, up to 10 T. A significant diamagnetic shift (∼2.5 meV) develops for magnetic fields above ∼8 T, which is accompanied by a narrowing of the emission bandwidth and a substantial increase in the difference between the integrated intensities of the σ{sup +} and σ{sup −} polarizations in the MPL spectra. This, along with a peculiar spectral dependence of the polarization degree which evolves with increasing magnetic field, is interpreted in terms of bound and free magneto excitons in the system where Bi-related levels become hybridized to different extents with the valence and conduction bands of the GaAs host material.

OSTI ID:
22271134
Journal Information:
Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 12 Vol. 115; ISSN JAPIAU; ISSN 0021-8979
Country of Publication:
United States
Language:
English