Low temperature magneto-photoluminescence of GaAsBi /GaAs quantum well heterostructures
- Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701 (United States)
- Departamento de Física, Universidade Federal de São Carlos, 13.565-905,São Carlos, São Paulo (Brazil)
- Department of Electrical Engineering, University of Arkansas, Fayetteville, Arkansas 72701 (United States)
- Institute of Semiconductor Physics, National Academy of Sciences, Kiev-03028 (Ukraine)
Strong optical anisotropy is observed in the emission from a GaAs{sub 1−x}Bi{sub x} (x ∼ 0.04) quantum well grown by low temperature molecular beam epitaxy on (001) GaAs by means of low temperature magneto-photoluminescence (MPL) taken at 2 K in Faraday geometry for magnetic fields, B, up to 10 T. A significant diamagnetic shift (∼2.5 meV) develops for magnetic fields above ∼8 T, which is accompanied by a narrowing of the emission bandwidth and a substantial increase in the difference between the integrated intensities of the σ{sup +} and σ{sup −} polarizations in the MPL spectra. This, along with a peculiar spectral dependence of the polarization degree which evolves with increasing magnetic field, is interpreted in terms of bound and free magneto excitons in the system where Bi-related levels become hybridized to different extents with the valence and conduction bands of the GaAs host material.
- OSTI ID:
- 22271134
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 12 Vol. 115; ISSN JAPIAU; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
77 NANOSCIENCE AND NANOTECHNOLOGY
ANISOTROPY
BISMUTH COMPOUNDS
DIAMAGNETISM
EMISSION SPECTRA
EXCITONS
GALLIUM ARSENIDES
HETEROJUNCTIONS
MAGNETIC FIELDS
MOLECULAR BEAM EPITAXY
PHOTOLUMINESCENCE
POLARIZATION
QUANTUM WELLS
TEMPERATURE RANGE 0065-0273 K
VALENCE