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Stability improvement of organic light emitting diodes by the insertion of hole injection materials on the indium tin oxide substrate

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.4869183· OSTI ID:22271118
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  1. Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 106, Taiwan (China)
The degradation of organic light-emitting diodes (OLEDs) is a very complex issue, which might include interfacial charge accumulation, material diffusion, and electrical-induced chemical reaction during the operation. In this study, the origins of improvement in device stability from inserting a hole injection layer (HIL) at the indium tin oxide (ITO) anode are investigated. The results from aging single-layer devices show that leakage current increases in the case of ITO/hole transport layer contact, but this phenomenon can be prevented by inserting molybdenum oxide (MoO{sub 3}) or 1,4,5,8,9,11-hexaazatriphenylene hexacarbonitrile (HAT-CN{sub 6}) as an HIL. Moreover, X-ray photoemission spectroscopy suggests that the diffusion of indium atoms and active oxygen species can be impeded by introducing MoO{sub 3} or HAT-CN{sub 6} as an HIL. These results reveal that the degradation of OLEDs is related to indium and oxygen out-diffusion from the ITO substrates, and that the stability of OLEDs can be improved by impeding this diffusion with HILs.
OSTI ID:
22271118
Journal Information:
Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 12 Vol. 115; ISSN JAPIAU; ISSN 0021-8979
Country of Publication:
United States
Language:
English