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Temperature dependence of gas sensing behaviour of TiO{sub 2} doped PANI composite thin films

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.4872722· OSTI ID:22271011
; ; ;  [1];  [2]; ;  [3]
  1. Thin Film and Membrane Science Lab, Department of Physics, University of Rajasthan, Jaipur- 302004 (India)
  2. Department of Physics, Govt. Women Engineering College, Ajmer-305002 (India)
  3. Centre for Converging Technology, University of Rajasthan, Jaipur-302004 (India)
In the present work we have reported the effect of temperature on the gas sensing properties of TiO{sub 2} doped PANI composite thin film based chemiresistor type gas sensors for hydrogen gas sensing application. PANI and TiO{sub 2} doped PANI composite were synthesized by in situ chemical oxidative polymerization of aniline at low temperature. The electrical properties of these composite thin films were characterized by I-V measurements as function of temperature. The I-V measurement revealed that conductivity of composite thin films increased as the temperature increased. The changes in resistance of the composite thin film sensor were utilized for detection of hydrogen gas. It was observed that at room temperature TiO{sub 2} doped PANI composite sensor shows higher response value and showed unstable behavior as the temperature increased. The surface morphology of these composite thin films has also been characterized by scanning electron microscopy (SEM) measurement.
OSTI ID:
22271011
Journal Information:
AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 1591; ISSN 0094-243X; ISSN APCPCS
Country of Publication:
United States
Language:
English

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