Simplified 2DEG carrier concentration model for composite barrier AlGaN/GaN HEMT
Journal Article
·
· AIP Conference Proceedings
- Indian Institute of Technology Kharagpur, Kharagpur - 721302, West Bengal (India)
The self consistent solution of Schrodinger and Poisson equations is used along with the total charge depletion model and applied with a novel approach of composite AlGaN barrier based HEMT heterostructure. The solution leaded to a completely new analytical model for Fermi energy level vs. 2DEG carrier concentration. This was eventually used to demonstrate a new analytical model for the temperature dependent 2DEG carrier concentration in AlGaN/GaN HEMT.
- OSTI ID:
- 22269331
- Journal Information:
- AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 1591; ISSN APCPCS; ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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