Three-dimensional transient model for time-domain free-carrier absorption measurement of excess carriers in silicon wafers

Journal Article · Sat Dec 28 04:00:00 EST 2013 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4852417· OSTI ID:22267781

Ren, Shengdong; Huang, Qiuping ^[1]; Li, Bincheng ^[1]

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1. Institute of Optics and Electronics, Chinese Academy of Sciences, P. O. Box 350, Shuangliu, Chengdu, Sichuan 610209 (China)

A three-dimensional transient model for time-domain (modulated) free-carrier absorption (FCA) measurement was developed to describe the transport dynamics of photo-generated excess carriers in silicon (Si) wafers. With the developed transient model, numerical simulations were performed to investigate the dependences of the waveforms of the transient FCA signals on the electronic transport parameters of Si wafers and the geometric parameters of the FCA experiment. Experimental waveforms of FCA signals of both n- and p-type Si wafers with resistivity ranging 1–38 Ω·cm were then fitted to the three-dimensional transient model to extract simultaneously and unambiguously the transport parameters of Si wafers, namely, the carrier lifetime, the carrier diffusion coefficient, and the front surface recombination velocity via multi-parameter fitting. A basic agreement between the extracted parameter values and the literature values was obtained.

• OSTI ID: 22267781
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 24 Vol. 114; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ABSORPTION
CARRIER LIFETIME
CARRIERS
COMPUTERIZED SIMULATION
RECOMBINATION
SILICON
VELOCITY
WAVE FORMS