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Role of polaron hopping in leakage current behavior of a SrTiO{sub 3} single crystal

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.4842836· OSTI ID:22266164
;  [1];  [2];  [3]
  1. Department of Materials Science and Engineering, Penn State University, University Park, Pennsylvania 16802 (United States)
  2. Department of Materials Science and Engineering, Indian Institute of Technology Hyderabad, YM 502205 (India)
  3. Department of Mathematics, Purdue University, West Lafayette, Indiana 47907 (United States)
We studied the ionic/electronic transport and resistance degradation behavior of dielectric oxides by solving the electrochemical transport equations. Here, we took into account the non-periodical boundary conditions for the transport equations using the Chebyshev collocation algorithm. A sandwiched Ni|SrTiO{sub 3}|Ni capacitor is considered as an example under the condition of 1.0 V, 1.0 μm thickness for SrTiO{sub 3} layer, and a temperature of 150 °C. The applied voltage resulted in the migration of ionic defects (oxygen vacancies) from anode towards cathode. The simulated electric potential profile at steady state is in good agreement with the recent experimental observation. We introduced the possibility of polaron-hopping between Ti{sup 3+} and Ti{sup 4+} at the electrode interface. It is shown that both the oxygen vacancy transport and the polaron-hopping contribute to the resistance degradation of single crystal SrTiO{sub 3}, which is consistent with the experimental observations.
OSTI ID:
22266164
Journal Information:
Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 22 Vol. 114; ISSN JAPIAU; ISSN 0021-8979
Country of Publication:
United States
Language:
English