Nonvolatile “AND,” “OR,” and “NOT” Boolean logic gates based on phase-change memory

Journal Article · Fri Dec 20 23:00:00 EST 2013 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4852995· OSTI ID:22266115

Li, Y.; Zhong, Y. P.; Deng, Y. F.; Zhou, Y. X.; Xu, L.

Electronic devices or circuits that can implement both logic and memory functions are regarded as the building blocks for future massive parallel computing beyond von Neumann architecture. Here we proposed phase-change memory (PCM)-based nonvolatile logic gates capable of AND, OR, and NOT Boolean logic operations verified in SPICE simulations and circuit experiments. The logic operations are parallel computing and results can be stored directly in the states of the logic gates, facilitating the combination of computing and memory in the same circuit. These results are encouraging for ultralow-power and high-speed nonvolatile logic circuit design based on novel memory devices.

• OSTI ID: 22266115
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 23 Vol. 114; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
DESIGN
ELECTRONIC EQUIPMENT
LOGIC CIRCUITS
MEMORY DEVICES
SIMULATION
VELOCITY