Optical and carrier transport properties of graphene oxide based crystalline-Si/organic Schottky junction solar cells

Journal Article · Sat Dec 21 00:00:00 EST 2013 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4847515· OSTI ID:22266101

Khatri, I.; Tang, Z.; Hiate, T.; Liu, Q.; Ishikawa, R.; Ueno, K.; Shirai, H. ^[1]

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1. Graduate School of Science and Engineering, Saitama University, Saitama 338-8570 (Japan)

We investigated the graphene oxide (GO) based n-type crystalline silicon (c-Si)/conductive poly(ethylene dioxythiophene):poly(styrenesulfonate)(PEDOT:PSS) Schottky junction devices with optical characterization and carrier transport measurement techniques. The optical transmittance in the UV region decreased markedly for the films with increasing the concentration of GO whereas it increased markedly in the visible-infrared regions. Spectroscopic ellipsometry revealed that the ordinary and extraordinary index of refraction increased with increasing the concentration of GO. The hole mobility also increased from 1.14 for pristine film to 1.85 cm{sup 2}/V s for the 12–15 wt. % GO modified film with no significant increases of carrier concentration. The highest conductivity was found for a 15 wt. % GO modified PEDOT:PSS film: the c-Si/PEDOT:PSS:GO device using this sample exhibited a relatively high power conversion efficiency of 11.04%. In addition, the insertion of a 2–3 nm-thick GO thin layer at the c-Si/PEDOT:PSS interface suppressed the carrier recombination efficiency of dark electron and photo-generated hole at the anode, resulting in the increased photovoltaic performance. This study indicates that the GO can be good candidates for hole transporting layer of c-Si/PEDOT:PSS Schottky junction solar cell.

• OSTI ID: 22266101
• Journal Information: Journal of Applied Physics, Vol. 114, Issue 23; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
77 NANOSCIENCE AND NANOTECHNOLOGY
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANODES
CARRIERS
CONCENTRATION RATIO
CONNECTORS
ELECTRIC CONTACTS
ETHYLENE
GRAPHENE
HOLE MOBILITY
OXIDES
PHOTOVOLTAIC EFFECT
REFRACTIVE INDEX
SEMICONDUCTOR JUNCTIONS
SILICON
SOLAR CELLS
SUPERCONDUCTING JUNCTIONS
THIN FILMS