Backside configured surface plasmonic enhancement

Journal Article · Mon Mar 31 00:00:00 EDT 2014 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4870217· OSTI ID:22265930

Gu, Guiru; Lu, Xuejun ^[1]; Vaillancourt, Jarrod ^[2]

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1. Department of Electrical and Computer Engineering, University of Massachusetts Lowell, One University Avenue, Lowell, MA 01854 (United States)
2. Applied NanoFemto Technologies, LLC, 181 Stedman St. 2, Lowell, MA 01851 (United States)

In this work, we fabricated, measured and compared the quantum dots infrared photodetector enhancement by the top- and backside- configured plasmonic structures. The backside configured plasmonic structure can provide much higher device performance enhancement. Furthermore, the excitation of the surface plasmonic waves by the top- and backside- configured plasmonic structures was analyzed. Detailed simulation results of the electric field at different wavelength from top illumination and backside illumination were provided. The stronger electric field from the backside illumination attributed to the higher enhancement.

• OSTI ID: 22265930
• Journal Information: AIP Conference Proceedings, Vol. 1590, Issue 1; Conference: International conference on electronic, photonic, plasmonic and magnetic properties of nanomaterials, London (Canada), 12-16 Aug 2013; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

70 PLASMA PHYSICS AND FUSION TECHNOLOGY
77 NANOSCIENCE AND NANOTECHNOLOGY
ELECTRIC FIELDS
ILLUMINANCE
QUANTUM DOTS
SIMULATION
SURFACES
WAVELENGTHS