Microscopic, electrical and optical studies on InGaN/GaN quantum wells based LED devices

Journal Article · Thu Feb 20 23:00:00 EST 2014 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4865660· OSTI ID:22263707

Mutta, Geeta Rani; Venturi, Giulia; Castaldini, Antonio; Cavallini, Anna ^[1]; Meneghini, Matteo; Zanoni, Enrico; Meneghesso, Gaudenzio ^[2]; Zhu, Dandan; Humphreys, Colin ^[3]

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1. Department of Physics and Astronomy, University of Bologna, Viale Carlo Berti Pichat 6/II, 40127 Bologna (Italy)
2. University of Padova, Department of Information Engineering, via Gradenigo 6/B, Padova 35131 (Italy)
3. Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge, CB2 3QZ (United Kingdom)

We report here on the micro structural, electronic and optical properties of a GaN-based InGaN/GaN MQW LED grown by the MOVPE method. The present study shows that the threading dislocations present in these LED structures are terminated as V pits at the surface and have an impact on the electrical and optical activity of these devices. It has been pointed that these dislocations were of edge, screw and mixed types. EBIC maps suggest that the electrically active defects are screw and mixed dislocations and behave as nonradiative recombinant centres.

• OSTI ID: 22263707
• Journal Information: AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 1583; ISSN 0094-243X; ISSN APCPCS
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
DEFECTS
DISLOCATIONS
GALLIUM NITRIDES
OPTICAL ACTIVITY
QUANTUM WELLS
SCANNING ELECTRON MICROSCOPY
SPECTROSCOPY
SURFACES