Electrical and optical properties of stacking faults introduced by plastic deformation in 4H-SiC
- Aix-Marseille Université, CNRS, IM2NP, UMR 7334, 13397, Marseille, France and Université de Toulon, CNRS, IM2NP, UMR 7334, 83957, La Garde (France)
- Institute of Microelectronics Technology RAS, 142432, Chernogolovka (Russian Federation)
The electrical and optical properties of stacking faults (SFs) introduced by plastic deformation in 4H-SiC were studied by Electron Beam Induced Current (EBIC) and cathodoluminescence (CL) methods. Partial dislocations and stacking faults in the (0001) glide planes perpendicular to the surface were introduced in n-type 4H-SiC under a well-controlled state of stress by cantilever bending at 550°C. CL measurements allow determining the multiplicity of the SFs (single or double). It is observed that the overwhelming majority of stacking faults are double Shockley type SFs (CL emission at 504 nm) that correlates well with previously published high resolution transmission electron microscopy (HRTEM) investigations. However, single Shockley type SFs (CL emission at 422 nm) of much smaller lengths are also observed in some areas near the scratched region from where the defects are nucleated. This suggests that the velocity of partial dislocation pairs under a given applied stress could be higher than that of single partial dislocations. It is also shown that in the EBIC mode, SFs produce a strong bright contrast, which can be explained by considering the SFs in 4H-SiC to be quantum wells of II type.
- OSTI ID:
- 22263681
- Journal Information:
- AIP Conference Proceedings, Vol. 1583, Issue 1; Conference: ICDS-2013: 27. international conference on defects in semiconductors, Bologna (Italy), 21-26 Jul 2013; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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