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Title: Structural investigation of the C-O complex in GaAs

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.4865620· OSTI ID:22263675
; ;  [1]
  1. Department of Applied Sciences and Mechatronics , Munich University of Applied Sciences, Lothstrasse 34, 80335 Muenchen (Germany)

A carbon-oxygen complex occurring in gallium arsenide crystals after annealing at around 700 °C is studied. Fourier transform infrared absorption measurements on the associated vibrational band at 2060 cm-1 under uniaxial stress reveal that the center has tetragonal symmetry. From the intensity of the {sup 18}O-related satellite band it is concluded that four oxygen atoms are involved. Ab initio local density calculations show that a tetragonal CO{sub 4} molecule forms a stable entity in the gallium arsenide lattice.

OSTI ID:
22263675
Journal Information:
AIP Conference Proceedings, Vol. 1583, Issue 1; Conference: ICDS-2013: 27. international conference on defects in semiconductors, Bologna (Italy), 21-26 Jul 2013; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
Country of Publication:
United States
Language:
English