Pd-vacancy complex in Ge: TDPAC and ab initio study
Journal Article
·
· AIP Conference Proceedings
- School of Physical, Environmental and Mathematical Sciences, The University of New South Wales, UNSW Canberra, PO Box 7916, Canberra BC 2610 (Australia)
Low temperature metal-induced-crystallized germanium is a promising alternative for silicon in Complementary Metal-Oxide-Semiconductor (CMOS) technology. Palladium (Pd) is one of the metals suitable for inducing the low temperature crystallization. It is not certain, how residual Pd atoms are integrated into the Ge lattice. Therefore, time-different γ-γ perturbed angular correlation (TDPAC) technique using the {sup 100}Pd(→{sup 100}Rh) nuclear probe has been applied to study the hyperfine interactions of this probe in single crystalline undoped Ge. A Pd-vacancy (Pd-V) complex with a unique interaction frequency of 8.4(2) Mrad/s has been identified. The Pd-V complex has been measured to have a maximum fraction after annealing at 350 °C. Density functional theory calculations have confirmed that the Pd-V complex may have the split-vacancy configuration in Ge, in contrast to the full-vacancy configuration observed in Si.
- OSTI ID:
- 22263671
- Journal Information:
- AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 1583; ISSN APCPCS; ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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