Nonradiative recombination mechanisms in InGaN/GaN-based light-emitting diodes investigated by temperature-dependent measurements

Journal Article · Mon Apr 14 04:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4871870· OSTI ID:22262587

Han, Dong-Pyo; Zheng, Dong-Guang; Oh, Chan-Hyoung; Kim, Hyunsung; Shim, Jong-In ^[1]; Shin, Dong-Soo ^[2]; Kim, Kyu-Sang ^[3]

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1. Department of Electronics and Communication Engineering, Hanyang University, ERICA Campus, Ansan, Gyeonggi-do 426-791 (Korea, Republic of)
2. Department of Applied Physics and Department of Bionanotechnology, Hanyang University, ERICA Campus, Ansan, Gyeonggi-do 426-791 (Korea, Republic of)
3. Department of Applied Physics and Electronics, Sangji University, Wonju, Gangwon-do 220-702 (Korea, Republic of)

Two kinds of InGaN-based light-emitting diodes (LEDs) are investigated to understand the nonradiative carrier recombination processes. Various temperature-dependent measurements such as external quantum efficiency, current-voltage, and electroluminescence spectra are utilized from 50 to 300 K. Based on these experimental results, we analyze the dominant nonradiative recombination mechanism for each LED device. We also analyze the effect of the dominant nonradiative recombination mechanism on the efficiency droop. On the basis of correlation between the efficiency droop and nonradiative recombination mechanisms, we discuss an approach to reducing the efficiency droop for each LED device.

• OSTI ID: 22262587
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 15 Vol. 104; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ELECTROLUMINESCENCE
GALLIUM NITRIDES
LIGHT EMITTING DIODES
QUANTUM EFFICIENCY
RECOMBINATION
TEMPERATURE DEPENDENCE