Microscopic analysis of non-equilibrium dynamics in the semiconductor-laser gain medium

Journal Article · Mon Apr 14 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4872316· OSTI ID:22262583

Hader, J.; Moloney, J. V. ^[1]; Koch, S. W. ^[2]

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1. Nonlinear Control Strategies, Inc., 3542 N. Geronimo Ave., Tucson, Arizona 85705, USA and Optical Sciences Center, University of Arizona, Tucson, Arizona 85721 (United States)
2. Department of Physics and Materials Sciences Center, Philipps Universität Marburg, Renthof 5, 35032 Marburg (Germany)

Fully microscopic many-body calculations are used to analyze the carrier dynamics in situations where a strong sub-picosecond pulse interacts with an inverted semiconductor quantum well. Electron-electron and electron-phonon scatterings are calculated on a second Born-Markov level. Intra-subband scatterings on a scale of tens of femtoseconds are shown to quickly re-fill the kinetic holes created in the carrier distributions during the pulse amplification. Even for sub-100 fs pulses, this significantly influences the pulse amplification as well as its spectral dependence. Interband scatterings on a few picosecond timescale limit the possibly achievable repetition rate in pulsed semiconductor lasers.

• OSTI ID: 22262583
• Journal Information: Applied Physics Letters, Vol. 104, Issue 15; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
MANY-BODY PROBLEM
PHONONS
PULSES
QUANTUM WELLS
SCATTERING
SEMICONDUCTOR LASERS
SEMICONDUCTOR MATERIALS