Intrinsic optical confinement for ultrathin InAsN quantum well superlattices
Journal Article
·
· AIP Conference Proceedings
- Université Europeenne de Bretagne, INSA Rennes,France and CNRS, UMR 6082, Foton, 20 avenues des Buttes de Coësmes, 35708 Rennes (France)
We study energy-band engineering with InAsN monolayer in GaAs/GaP quantum well structure. A tight-binding calculation indicates that both type I alignment along with direct band-gap behavior can be obtained. We show that the optical transitions are less sensitive to the position of the probe.
- OSTI ID:
- 22261901
- Journal Information:
- AIP Conference Proceedings, Vol. 1566, Issue 1; Conference: ICPS 2012: 31. international conference on the physics of semiconductors, Zurich (Switzerland), 29 Jul - 3 Aug 2012; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
Similar Records
Stimulated visible light emission from ultrathin GaAs single and multiple quantum wells sandwiched between indirect-gap (Al sub 0. 49 Ga sub 0. 51 As) confining layers
Observation of room temperature optical absorption in InP/GaAs type-II ultrathin quantum wells and quantum dots
Growth and characterization of GaAs/AlAs superlattice alloys
Journal Article
·
Mon May 14 00:00:00 EDT 1990
· Applied Physics Letters; (USA)
·
OSTI ID:22261901
+1 more
Observation of room temperature optical absorption in InP/GaAs type-II ultrathin quantum wells and quantum dots
Journal Article
·
Sat Jun 14 00:00:00 EDT 2014
· Journal of Applied Physics
·
OSTI ID:22261901
+4 more
Growth and characterization of GaAs/AlAs superlattice alloys
Conference
·
Thu Jan 01 00:00:00 EST 1987
·
OSTI ID:22261901
+1 more