Emission of terahertz radiation from GaN/AlGaN heterostructure under electron heating in lateral electric field

Journal Article · Wed Dec 04 00:00:00 EST 2013 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4848479· OSTI ID:22261896

Shalygin, V. A.; Vorobjev, L. E.; Firsov, D. A.; Sofronov, A. N.; Melentyev, G. A. ^[1]; Lundin, W. V.; Sakharov, A. V.; Tsatsulnikov, A. F. ^[2]

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1. St. Petersburg State Polytechnic University, 195251 St. Petersburg (Russian Federation)
2. Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation)

Spontaneous emission of terahertz radiation from modulation-doped AlGaN/GaN heterostructure under conditions of heating of a two-dimensional electron gas in the lateral electric field has been studied. The experimental data on the field dependence of the integral intensity of THz emission is compared with the theoretical simulation of blackbody-like emission from hot 2D electrons. Complementary transport measurements have been carried out to determine the dependence of effective electron temperature on electric field.

• OSTI ID: 22261896
• Journal Information: AIP Conference Proceedings, Vol. 1566, Issue 1; Conference: ICPS 2012: 31. international conference on the physics of semiconductors, Zurich (Switzerland), 29 Jul - 3 Aug 2012; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
DOPED MATERIALS
ELECTRIC FIELDS
ELECTRON GAS
ELECTRON TEMPERATURE
ELECTRONS
EMISSION
GALLIUM NITRIDES
SIMULATION