Spin injection and filtering in halfmetal/semiconductor (CrAs/GaAs) heterostructures

Journal Article · Wed Dec 04 00:00:00 EST 2013 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4848409· OSTI ID:22261832

Stickler, B. A.; Ertler, C.; Pötz, W. ^[1]; Chioncel, L. ^[2]; Arrigoni, E. ^[3]

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1. Institute of Physics, Karl-Franzens Universität Graz (Austria)
2. Institute of Physics, Universität Augsburg (Germany)
3. Institute of Theoretical and Computational Physics, TU Graz (Austria)

Theoretical investigations of spin-dependent transport in GaAS/CrAs/GaAs halfmetal-semiconductor heterostructures indicate that this system is a candidate for an efficient room temperature spin injector and filter. The spin dependent electronic structure of zincblende CrAs and the band offset between GaAs and CrAs are determined by ab-initio calculations within the method of linear muffin tin orbitals (LMTO). This band structure is mapped onto an effective sp{sup 3}d{sup 5}s* nearest neighbor tight-binding (TB) Hamiltonian and the steady-state transport characteristic is calculated within a non-equilibrium Green’s function approach. Even at room temperature we find current spin polarizations up to 97%.

• OSTI ID: 22261832
• Journal Information: AIP Conference Proceedings, Vol. 1566, Issue 1; Conference: ICPS 2012: 31. international conference on the physics of semiconductors, Zurich (Switzerland), 29 Jul - 3 Aug 2012; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ELECTRONIC STRUCTURE
GALLIUM ARSENIDES
HAMILTONIANS
MUFFIN-TIN POTENTIAL
SEMICONDUCTOR MATERIALS
SPIN
SPIN ORIENTATION
ZINC SULFIDES