High resolution InSb quantum well ballistic nanosensors for room temperature applications

Journal Article · Wed Dec 04 00:00:00 EST 2013 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4848310· OSTI ID:22261751

Gilbertson, Adam; Cohen, L. F. ^[1]; Lambert, C. J. ^[2]; Solin, S. A. ^[3]

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1. Blackett Laboratory, Imperial College London, SW7 2BZ (United Kingdom)
2. Department of Physics, Lancaster University, Lancaster, LA1 4YB (United Kingdom)
3. Department of Physics, Washington University in St. Louis, St. Louis, Missouri 63130 (United States)

We report the room temperature operation of a quasi-ballistic InSb quantum well Hall sensor that exhibits a high frequency sensitivity of 560nT/√Hz at 20uA bias current. The device utilizes a partitioned buffer layer design that suppresses leakage currents through the mesa floor and can sustain large current densities.

• OSTI ID: 22261751
• Journal Information: AIP Conference Proceedings, Vol. 1566, Issue 1; Conference: ICPS 2012: 31. international conference on the physics of semiconductors, Zurich (Switzerland), 29 Jul - 3 Aug 2012; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CURRENT DENSITY
INDIUM ANTIMONIDES
LEAKAGE CURRENT
QUANTUM WELLS
TEMPERATURE RANGE 0273-0400 K