Asymmetric electroresistance of cluster glass state in manganites
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371 (Singapore)
- Materials Sciences and Engineering, King Abdullah University of Science and Technology, Thuwal 23955-6900 (Saudi Arabia)
We report the electrostatic modulation of transport in strained Pr{sub 0.65}(Ca{sub 0.75}Sr{sub 0.25}){sub 0.35}MnO{sub 3} thin films grown on SrTiO{sub 3} by gating with ionic liquid in electric double layer transistors (EDLT). In such manganite films with strong phase separation, a cluster glass magnetic state emerges at low temperatures with a spin freezing temperature of about 99 K, which is accompanied by the reentrant insulating state with high resistance below 30 K. In the EDLT, we observe bipolar and asymmetric modulation of the channel resistance, as well as an enhanced electroresistance up to 200% at positive gate bias. Our results provide insights on the carrier-density-dependent correlated electron physics of cluster glass systems.
- OSTI ID:
- 22261611
- Journal Information:
- Applied Physics Letters, Vol. 104, Issue 13; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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