Anomalous large electrical capacitance of planar microstructures with vanadium dioxide films near the insulator-metal phase transition

Journal Article · Mon Mar 31 04:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4869125· OSTI ID:22261607

Bortnikov, S. G.; Badmaeva, I. A. ^[1]

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1. Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, 13 Lavrentyev Ave., 630090 Novosibirsk (Russian Federation)

The temperature dependence of electrical capacitance of planar microstructures with vanadium dioxide (VO{sub 2}) film near the insulator-metal phase transition has been investigated at the frequency of 1 MHz. Electrical capacitance measurements of the microstructures were performed by the technique based on the using of a two-terminal resistor-capacitor module simulating the VO{sub 2} layer behavior at the insulator-metal phase transition. At temperatures 325–342 K, the anomalous increase in microstructures capacitance was observed. Calculation of electric field in the microstructure showed that VO{sub 2} relative permittivity (ε) reaches ∼10{sup 8} at the percolation threshold. The high value of ε can be explained by the fractal nature of the interface between metal and insulator clusters formed near the insulator-metal phase transition.

• OSTI ID: 22261607
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 13 Vol. 104; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
CAPACITANCE
CAPACITORS
ELECTRIC FIELDS
METALS
MICROSTRUCTURE
PERMITTIVITY
PHASE TRANSFORMATIONS
RESISTORS
TEMPERATURE DEPENDENCE
THIN FILMS
VANADIUM OXIDES