Formation of p-n-p junction with ionic liquid gate in graphene

Journal Article · Mon Apr 07 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4870656· OSTI ID:22261595

He, Xin; Tang, Ning; Duan, Junxi; Zhang, Yuewei; Lu, Fangchao; Xu, Fujun; Yang, Xuelin ^[1]; Gao, Li ^[2]; Wang, Xinqiang; Shen, Bo ^[1]; Ge, Weikun ^[3]

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1. State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Peking University, Beijing 100871 (China)
2. Institute of Life Sciences, Jiangsu University, Zhenjiang 212013, Jiangsu Province (China)
3. Department of Physics, Tsinghua University, Beijing 100084 (China)

Ionic liquid gating is a technique which is much more efficient than solid gating to tune carrier density. To observe the electronic properties of such a highly doped graphene device, a top gate made of ionic liquid has been used. By sweeping both the top and back gate voltage, a p-n-p junction has been created. The mechanism of forming the p-n-p junction has been discussed. Tuning the carrier density by ionic liquid gate can be an efficient method to be used in flexible electronics.

• OSTI ID: 22261595
• Journal Information: Applied Physics Letters, Vol. 104, Issue 14; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CARRIER DENSITY
DOPED MATERIALS
GRAPHENE
MOLTEN SALTS
SEMICONDUCTOR JUNCTIONS