Strain relaxation in graphene grown by chemical vapor deposition

Journal Article · Sat Dec 07 04:00:00 EST 2013 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4834538· OSTI ID:22258694

Gluba, Marc A.; Kraft, Marco; Rappich, Jörg; Nickel, Norbert H. ^[1]

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1. Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Institut für Silizium Photovoltaik, Kekuléstr. 5, D-12489 Berlin (Germany)

The growth of single layer graphene by chemical vapor deposition on polycrystalline Cu substrates induces large internal biaxial compressive strain due to thermal expansion mismatch. Raman backscattering spectroscopy and atomic force microscopy were used to study the strain relaxation during and after the transfer process from Cu foil to SiO{sub 2}. Interestingly, the growth of graphene results in a pronounced ripple structure on the Cu substrate that is indicative of strain relaxation of about 0.76% during the cooling from the growth temperature. Removing graphene from the Cu substrates and transferring it to SiO{sub 2} results in a shift of the 2D phonon line by 27 cm{sup −1} to lower frequencies. This translates into additional strain relaxation. The influence of the processing steps, used etching solution and solvents on strain, is investigated.

• OSTI ID: 22258694
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 21 Vol. 114; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ATOMIC FORCE MICROSCOPY
BACKSCATTERING
CHEMICAL VAPOR DEPOSITION
COOLING
ETCHING
FOILS
GRAPHENE
PHONONS
POLYCRYSTALS
RELAXATION
SILICA
SILICON OXIDES
SPECTROSCOPY
STRAINS
SUBSTRATES
THERMAL EXPANSION