Electrical switching effect of a single-unit-cell CrO{sub 2} layer on rutile TiO{sub 2} surface

Journal Article · Mon Mar 24 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4869852· OSTI ID:22258599

Li, Si-Da ^[1]; Liu, Bang-Gui ^[1]

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1. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China)

Rutile CrO{sub 2} is the most important half-metallic material with nearly 100% spin polarization at the Fermi level, and rutile TiO{sub 2} is a wide-gap semiconductor with many applications. Here, we show through first-principles investigation that a single-unit-cell CrO{sub 2} layer on rutile TiO{sub 2} (001) surface is ferromagnetic and semiconductive with a gap of 0.54 eV, and its electronic state transits abruptly to a typical metallic state when an electrical field is applied. Consequently, this makes an interesting electrical switching effect which may be useful in designing spintronic devices.

• OSTI ID: 22258599
• Journal Information: Applied Physics Letters, Vol. 104, Issue 12; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
CHROMIUM OXIDES
FERMI LEVEL
RUTILE
SEMICONDUCTOR MATERIALS
SPIN ORIENTATION
SURFACES
TITANIUM OXIDES