Tunneling characteristics in chemical vapor deposited graphene–hexagonal boron nitride–graphene junctions

Journal Article · Mon Mar 24 04:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4870073· OSTI ID:22258592

Roy, T.; Hesabi, Z. R.; Joiner, C. A.; Vogel, E. M. ^[1]; Liu, L.; Gu, G. ^[2]; Barrera, S. de la; Feenstra, R. M. ^[3]; Chakrabarti, B. ^[1]

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1. School of Materials Science and Engineering, Georgia Institute of Technology, 771 Ferst Drive, Atlanta, Georgia 30332 (United States)
2. Department of Electrical Engineering and Computer Science, University of Tennessee, 1520 Middle Drive, Knoxville, Tennessee 37996 (United States)
3. Department of Physics, Carnegie Mellon University, 5000 Forbes Ave., Pittsburgh, Pennsylvania 15213 (United States)

Large area chemical vapor deposited graphene and hexagonal boron nitride was used to fabricate graphene–hexagonal boron nitride–graphene symmetric field effect transistors. Gate control of the tunneling characteristics is observed similar to previously reported results for exfoliated graphene–hexagonal boron nitride–graphene devices. Density-of-states features are observed in the tunneling characteristics of the devices, although without large resonant peaks that would arise from lateral momentum conservation. The lack of distinct resonant behavior is attributed to disorder in the devices, and a possible source of the disorder is discussed.

• OSTI ID: 22258592
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 12 Vol. 104; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BORON NITRIDES
CHEMICAL VAPOR DEPOSITION
FIELD EFFECT TRANSISTORS
GRAPHENE
SEMICONDUCTOR JUNCTIONS
TUNNEL EFFECT