Reconfigurable p-n junction diodes and the photovoltaic effect in exfoliated MoS{sub 2} films

Journal Article · Mon Mar 24 04:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4870067· OSTI ID:22258586

Sutar, Surajit; Agnihotri, Pratik; Comfort, Everett; Taniguchi, T.; Watanabe, K. ^[1]

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1. National Institute of Materials Science, 1-2-1 Sengen, Tsukuba-city, Ibaraki 305-0047 (Japan)

Realizing basic semiconductor devices such as p-n junctions are necessary for developing thin-film and optoelectronic technologies in emerging planar materials such as MoS{sub 2}. In this work, electrostatic doping by buried gates is used to study the electronic and optoelectronic properties of p-n junctions in exfoliated MoS{sub 2} flakes. Creating a controllable doping gradient across the device leads to the observation of the photovoltaic effect in monolayer and bilayer MoS{sub 2} flakes. For thicker flakes, strong ambipolar conduction enables realization of fully reconfigurable p-n junction diodes with rectifying current-voltage characteristics, and diode ideality factors as low as 1.6. The spectral response of the photovoltaic effect shows signatures of the predicted band gap transitions. For the first excitonic transition, a shift of >4{sub kB}T is observed between monolayer and bulk devices, indicating a thickness-dependence of the excitonic coulomb interaction.

• OSTI ID: 22258586
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 12 Vol. 104; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
MOLYBDENUM SULFIDES
P-N JUNCTIONS
PHOTOVOLTAIC EFFECT
SEMICONDUCTOR DEVICES
THIN FILMS