Influence of gadolinium doping on the structure and defects of ceria under fuel cell operating temperature

Journal Article · Mon Mar 17 04:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4869116· OSTI ID:22257712

Gaikwad, V. M. ^[1]; Sathe, V. ^[2]; Kulkarni, S. K. ^[3]

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1. Department of Physics, RTM Nagpur University, Nagpur 440033, MS (India)
2. UGC-DAE-CSR, University Campus, Khandwa Road, Indore 452001 (India)
3. Indian Institute of Science Education and Research, Pune 411008 (India)

Correlation between atomic positional shift, oxygen vacancy defects, and oxide ion conductivity in doped ceria system has been established in the gadolinium doped ceria system from X-ray diffraction (XRD) and Raman spectroscopy study at operating temperature (300–600 °C) of Intermediate Temperature Solid Oxide Fuel Cell (IT-SOFC). High temperature XRD data are used to quantify atomic positional shift from mean position with temperature. The Raman spectroscopy study shows additional vibration modes related to ordering of defect spaces (Gd{sub Ce}{sup ′}−V{sub o}{sup ••}){sup *} and (2Gd{sub Ce}{sup ′}−V{sub o}{sup ••}){sup x} generated due to association of oxygen vacancies and reduced cerium or dopant cations site (Gd{sup 3+}), which disappear at 450 °C; indicating oxygen vacancies dissociation from the defect complex. The experimental evidences of cation-anion positional shifting and oxygen vacancies dissociation from defect complex in the IT-SOFC operating temperature are discussed to correlate with activation energy for ionic conductivity.

• OSTI ID: 22257712
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 11 Vol. 104; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CATIONS
CERIUM OXIDES
DOPED MATERIALS
GADOLINIUM IONS
RAMAN SPECTROSCOPY
SOLID OXIDE FUEL CELLS
VACANCIES
X-RAY DIFFRACTION