Magnetic resonance investigation of Zn{sub 1−x}Fe{sub x}O properties influenced by annealing atmosphere

Journal Article · Wed Nov 13 04:00:00 EST 2013 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4833739· OSTI ID:22257189

Raita, O.; Popa, A.; Toloman, D.; Stan, M.; Giurgiu, L. M. ^[1]

---

1. National Institute for Research and Development of Isotopic and Molecular Technologies Donath 65-103, 400293, Cluj-Napoca (Romania)

ZnO is an attractive system for a wide variety of practical applications, being a chemically stable oxide semiconductor. It has been shown that Fe doping produces ferromagnetic semiconductor at room temperature. This material, therefore, has the potential for use in spintronic devices such as spin transistors, spin light emitting diodes, very high density nonvolatile semiconductor memory and optical emitters. It is believed that oxygen vacancies and substitutional incorporation are important to produce ferromagnetism in semiconductor oxide doped with transition metal ions. The present paper reports detailed electron paramagnetic resonance investigations (EPR) of the samples in order to investigate how annealing atmosphere (Air and Argon) influenced the magnetic behavior of the samples. X-band electron paramagnetic resonance (EPR) studies of Fe{sup 3+} ions in Zn{sub 1−x}Fe{sub x}O powders with x = 1%, 3% is reported. These samples are interesting to investigate as Fe doping produce ferromagnetism in ZnO, making a promising ferromagnetic semiconductor at room temperature.

• OSTI ID: 22257189
• Journal Information: AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 1565; ISSN APCPCS; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
DENSITY
DOPED MATERIALS
ELECTRON SPIN RESONANCE
FERROMAGNETISM
IRON IONS
LIGHT EMITTING DIODES
SEMICONDUCTOR MATERIALS
TRANSITION ELEMENTS
ZINC OXIDES