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Title: Mechanical properties of individual InAs nanowires studied by tensile tests

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4868133· OSTI ID:22257060
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  1. Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

Mechanical properties of individual InAs nanowires (NWs) synthesized by metal organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) methods are studied by in-situ tensile tests in a scanning electron microscope and their fracture strength and Young's modulus are obtained. The two types of NWs both exhibit brittle fracture with a maximum elastic strain up to ∼10%. Their fracture strength distributes in a similar range of ∼2–5 GPa with a general trend of increasing with NW volume decrease, which is well described by Weibull statistic with a smaller Weibull modulus and a higher characteristic strength for MOCVD NWs. Young's modulus is determined to be 16–78 GPa with an average value of 45 GPa and no dependence on NW diameter for MOCVD NWs and 34–79 GPa with an average value of 58 GPa for MBE NWs.

OSTI ID:
22257060
Journal Information:
Applied Physics Letters, Vol. 104, Issue 10; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
Country of Publication:
United States
Language:
English