Direct evidence for self-trapping of excitons by indium nanowires at In/Si(111) surface
- Institute of Applied Physics, CREST-JST, University of Tsukuba, 305-8573 Tsukuba (Japan)
- Key Laboratory for Thin Film and Microfabrication of the Ministry of Education, Research Institute of Micro/Nano Science and Technology, Shanghai Jiao Tong University, Shanghai 200240 (China)
We report on the real-space observation of self-trapped excitons using scanning tunneling microscope. Electrons of In nanowires transfer to the Si substrate, yielding charge-transfer excitons at In/Si interface. The strong coupling between excitons and lattice vibrations leads to the exciton localization at low carrier density and 80.0 K. Exciton condensation was observed at the proper carrier density and its microscopic origin is discussed.
- OSTI ID:
- 22254141
- Journal Information:
- Applied Physics Letters, Vol. 103, Issue 19; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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