Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges

Journal Article · Mon Nov 04 00:00:00 EST 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4829062· OSTI ID:22254128

Montes Bajo, M.; Paskova, T. ^[1]; Evans, K. R. ^[1]; Leach, J. ^[1]; Li, X.; Özgür, Ü.; Morkoç, H. ^[2]; Chabak, K. D.; Crespo, A.; Gillespie, J. K.; Fitch, R.; Kossler, M.; Walker, D. E.; Trejo, M.; Via, G. D.; Blevins, J. D. ^[3]

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1. Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States)
2. Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States)
3. Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States)

To enable gaining insight into degradation mechanisms of AlGaN/GaN high electron mobility transistors, devices grown on a low-dislocation-density bulk-GaN substrate were studied. Gate leakage current and electroluminescence (EL) monitoring revealed a progressive appearance of EL spots during off-state stress which signify the generation of gate current leakage paths. Atomic force microscopy evidenced the formation of semiconductor surface pits at the failure location, which corresponds to the interaction region of the gate contact edge and the edges of surface steps.

• OSTI ID: 22254128
• Journal Information: Applied Physics Letters, Vol. 103, Issue 19; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ATOMIC FORCE MICROSCOPY
DENSITY
DISLOCATIONS
ELECTROLUMINESCENCE
ELECTRON MOBILITY
FAILURES
GALLIUM NITRIDES
LEAKAGE CURRENT
SEMICONDUCTOR MATERIALS
SUBSTRATES
SURFACES
TRANSISTORS