Quantum dot Ge/TiO{sub 2} heterojunction photoconductor fabrication and performance
- Department of Chemistry, University of California Davis, Davis, California 95616 (United States)
- Key Laboratory of Interface Science and Engineering in Advanced Materials of Ministry of Education, Taiyuan University of Science and Technology, Taiyuan, Shanxi 030024 (China)
Spun cast TiO{sub 2}-Ge quantum dot (QD) heterojunction type photodetectors have been fabricated and characterized, with interest paid to photocurrent enhancements related to device design. Performance as a function of absorber layer thickness, QD size, and back contact is investigated. We have achieved ultra-thin (∼200 nm) devices with photocurrents at 0.5 V of 10{sup −4} A cm{sup −2} while the thickest devices have photocurrents at 0.5 V of 10{sup −2} A cm{sup −2} with on-off ratios >100, which represents 5 orders of magnitude increase in photocurrents over previously fabricated Ge QD devices. At 0.5 V bias, the currents in our devices are competitive with thin-film Ge photovoltaics.
- OSTI ID:
- 22253965
- Journal Information:
- Applied Physics Letters, Vol. 103, Issue 22; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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