Investigations on correlation between I–V characteristic and internal quantum efficiency of blue (AlGaIn)N light-emitting diodes

Journal Article · Mon Nov 25 00:00:00 EST 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4833895· OSTI ID:22253942

Galler, B.; Furitsch, M.; Off, J.; Zeisel, R.; Katz, S. ^[1]; Wagner, J. ^[2]

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1. OSRAM Opto Semiconductors GmbH, Leibnizstraße 4, 93055 Regensburg (Germany)
2. Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastraße 72, 79108 Freiburg (Germany)

We have studied the electrical and optical characteristics of (AlGaIn)N multiple quantum well light-emitting diodes. Minimizing contact effects by utilizing platinum as p-contact metal, ideality factors as low as 1.1 have been achieved. In agreement with basic semiconductor theory, a correlation between ideality factor and small-current efficiency was found. We were able to emulate the experimental current-voltage characteristic over seven orders of magnitude utilizing a two diode model. This model enables a very good prediction of internal quantum efficiency at moderate current densities out of purely electrically derived parameters.

• OSTI ID: 22253942
• Journal Information: Applied Physics Letters, Vol. 103, Issue 22; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
CORRELATIONS
CURRENT DENSITY
ELECTRIC POTENTIAL
LIGHT EMITTING DIODES
PLATINUM
QUANTUM EFFICIENCY
QUANTUM WELLS
SEMICONDUCTOR MATERIALS