Acoustically assisted spin-transfer-torque switching of nanomagnets: An energy-efficient hybrid writing scheme for non-volatile memory
- Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, Virginia 23284 (United States)
- Department of Mechanical and Nuclear Engineering, Virginia Commonwealth University, Richmond, Virginia 23284 (United States)
We show that the energy dissipated to write bits in spin-transfer-torque random access memory can be reduced by an order of magnitude if a surface acoustic wave (SAW) is launched underneath the magneto-tunneling junctions (MTJs) storing the bits. The SAW-generated strain rotates the magnetization of every MTJs' soft magnet from the easy towards the hard axis, whereupon passage of a small spin-polarized current through a target MTJ selectively switches it to the desired state with > 99.99% probability at room temperature, thereby writing the bit. The other MTJs return to their original states at the completion of the SAW cycle.
- OSTI ID:
- 22253923
- Journal Information:
- Applied Physics Letters, Vol. 103, Issue 23; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Voltage induced magnetostrictive switching of nanomagnets: Strain assisted strain transfer torque random access memory
A hybrid magnetic/complementary metal oxide semiconductor three-context memory bit cell for non-volatile circuit design
Analysis of self-heating of thermally assisted spin-transfer torque magnetic random access memory
Journal Article
·
Mon Jun 30 00:00:00 EDT 2014
· Applied Physics Letters
·
OSTI ID:22253923
+2 more
A hybrid magnetic/complementary metal oxide semiconductor three-context memory bit cell for non-volatile circuit design
Journal Article
·
Mon Apr 07 00:00:00 EDT 2014
· Journal of Applied Physics
·
OSTI ID:22253923
Analysis of self-heating of thermally assisted spin-transfer torque magnetic random access memory
Journal Article
·
Fri Nov 11 00:00:00 EST 2016
· Beilstein Journal of Nanotechnology
·
OSTI ID:22253923
+2 more