Barrier performance optimization of atomic layer deposited diffusion barriers for organic light emitting diodes using x-ray reflectivity investigations

Journal Article · Mon Dec 02 00:00:00 EST 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4839455· OSTI ID:22253906

Singh, Aarti; Schröder, Uwe ^[1]; Klumbies, Hannes; Müller-Meskamp, Lars; Leo, Karl ^[2]; Geidel, Marion; Knaut, Martin; Hoßbach, Christoph; Albert, Matthias ^[3]; Mikolajick, Thomas ^[1]

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1. Nanoelectronics Materials Laboratory NaMLab gGmbH, Nöthnitzer Str. 64, 01187 Dresden (Germany)
2. Dresden Innovation Center Energy Efficiency, Institut für Angewandte Photophysik, Technische Universität Dresden, 01062 Dresden (Germany)
3. Institute of Semiconductor and Microsystems Technology, Technische Universität Dresden, 01187 Dresden (Germany)

The importance of O{sub 3} pulse duration for encapsulation of organic light emitting diodes (OLEDs) with ultra thin inorganic atomic layer deposited Al{sub 2}O{sub 3} layers is demonstrated for deposition temperatures of 50 °C. X-ray reflectivity (XRR) measurements show that O{sub 3} pulse durations longer than 15 s produce dense and thin Al{sub 2}O{sub 3} layers. Correspondingly, black spot growth is not observed in OLEDs encapsulated with such layers during 91 days of aging under ambient conditions. This implies that XRR can be used as a tool for process optimization of OLED encapsulation layers leading to devices with long lifetimes.

• OSTI ID: 22253906
• Journal Information: Applied Physics Letters, Vol. 103, Issue 23; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM OXIDES
DEPOSITION
DIFFUSION BARRIERS
LAYERS
LIGHT EMITTING DIODES
OPTIMIZATION
PERFORMANCE
REFLECTIVITY
X RADIATION