Mode-locked red-emitting semiconductor disk laser with sub-250 fs pulses

Journal Article · Mon Dec 09 00:00:00 EST 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4835855· OSTI ID:22253854

Kahle, H.; Schwarzbäck, T.; Jetter, M.; Michler, P. ^[1]

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1. Institut für Halbleiteroptik und Funktionelle Grenzflächen and Research Center SCoPE, University of Stuttgart, Allmandring 3, 70569 Stuttgart (Germany)

We report on passive mode locking of a semiconductor disk laser emitting pulses shorter than 250 fs at 664 nm with a repetition frequency of 836 MHz. A fast saturable absorber mirror fabricated by metal-organic vapor-phase epitaxy in a near-resonant design was used to enable the mode locking operation. It includes two GaInP quantum wells located close to the surface and an additional fused silica coating. The emission spectrum shows the superposition of a soliton-like part and a smaller “continuum” part.

• OSTI ID: 22253854
• Journal Information: Applied Physics Letters, Vol. 103, Issue 24; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
DESIGN
EMISSION SPECTRA
LASERS
MIRRORS
MODE LOCKING
ORGANOMETALLIC COMPOUNDS
PULSES
QUANTUM WELLS
SEMICONDUCTOR MATERIALS
SILICA
SOLITONS
SURFACES
VAPOR PHASE EPITAXY