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A concept for a magnetic field detector underpinned by the nonlinear dynamics of coupled multiferroic devices

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4846315· OSTI ID:22253787
; ;  [1]; ;  [2];  [3];  [4]
  1. Dipartimento di Ingegneria Elettrica Elettronica e dei Sistemi, Università degli Studi di Catania, Viale A. Doria 6, 95125 Catania (Italy)
  2. Space and Naval Warfare Systems Center, Code 71000, 53560 Hull Street, San Diego, California 92152-5001 (United States)
  3. Advanced Light Source, Lawrence Berkeley National Laboratory, 1 Cyclotron Rd MS6-R2100, Berkeley, California 94720 (United States)
  4. Center for Excellence in Nanoelectronics, Department of Electrical Engineering, Indian Institute of Technology, Mumbai 400076 (India)
Multiferroic (MF) composites, in which magnetic and ferroelectric orders coexist, represent a very attractive class of materials with promising applications in areas, such as spintronics, memories, and sensors. One of the most important multiferroics is the perovskite phase of bismuth ferrite, which exhibits weak magnetoelectric properties at room temperature; its properties can be enhanced by doping with other elements such as dysprosium. A recent paper has demonstrated that a thin film of Bi{sub 0.7}Dy{sub 0.3}FeO{sub 3} shows good magnetoelectric coupling. In separate work it has been shown that a carefully crafted ring connection of N (N odd and N ≥ 3) ferroelectric capacitors yields, past a critical point, nonlinear oscillations that can be exploited for electric (E) field sensing. These two results represent the starting point of our work. In this paper the (electrical) hysteresis, experimentally measured in the MF material Bi{sub 0.7}Dy{sub 0.3}FeO{sub 3}, is characterized with the applied magnetic field (B) taken as a control parameter. This yields a “blueprint” for a magnetic (B) field sensor: a ring-oscillator coupling of N = 3 Sawyer-Tower circuits each underpinned by a mutliferroic element. In this configuration, the changes induced in the ferroelectric behavior by the external or “target” B-field are quantified, thus providing a pathway for very low power and high sensitivity B-field sensing.
OSTI ID:
22253787
Journal Information:
Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 24 Vol. 103; ISSN APPLAB; ISSN 0003-6951
Country of Publication:
United States
Language:
English