Temperature-dependent quantum efficiency of Ga(N,As,P) quantum wells

Journal Article · Mon Dec 16 00:00:00 EST 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4852575· OSTI ID:22253733

Metzger, B.; Volz, K.; Chatterjee, S. ^[1]; Kunert, B. ^[2]; Stolz, W. ^[1]

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1. Faculty of Physics and Material Sciences Center, Philipps-Universität Marburg, Renthof 5, D-35032 Marburg (Germany)
2. NAsP III/V GmbH, Am Knechtacker 19, D-35041 Marburg (Germany)

The photoluminescence quantum efficiencies of a series of Ga(N,As,P)/GaP multiple quantum wells are analyzed. The external quantum efficiencies are derived from the absorbed and the emitted light intensities measured using an integrating sphere mounted inside a closed-cycle helium cryostat. By taking into account the device layer sequences as well as internal reflections and reabsorption, the internal quantum efficiencies yield values above 90% for all samples at cryogenic temperatures. The temperature-dependence of the quantum efficiencies as a function of active quantum well layer design reveal the internal interfaces as remaining growth challenge in these heterostructures.

• OSTI ID: 22253733
• Journal Information: Applied Physics Letters, Vol. 103, Issue 25; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
36 MATERIALS SCIENCE
CRYOSTATS
DESIGN
GALLIUM PHOSPHIDES
HELIUM
PHOTOLUMINESCENCE
QUANTUM EFFICIENCY
QUANTUM WELLS
REFLECTION
TEMPERATURE DEPENDENCE