Graphene surface emitting terahertz laser: Diffusion pumping concept

Journal Article · Mon Dec 16 00:00:00 EST 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4850522· OSTI ID:22253727

Morozov, Mikhail Yu.; Popov, Vyacheslav V. ^[1]; Satou, Akira; Otsuji, Taiichi ^[2]

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1. Kotelnikov Institute of Radio Engineering and Electronics (Saratov Branch), Russian Academy of Sciences, Saratov 410019 (Russian Federation)
2. Research Institute of Electrical Communication (RIEC), Tohoku University, Sendai, Miyagi 980-8577 (Japan)

We suggest a concept of a tunable graphene-based terahertz (THz) surface emitting laser with diffusion pumping. We employ significant difference in the electronic energy gap of graphene and a typical wide-gap semiconductor, and demonstrate that carriers generated in the semiconductor can be efficiently captured by graphene resulting in population inversion and corresponding THz lasing from graphene. We develop design principles for such a laser and estimate its performance. We predict up to 50 W/cm{sup 2} terahertz power output for 100 kW/cm{sup 2} pump power at frequency around 10 THz at room temperature.

• OSTI ID: 22253727
• Journal Information: Applied Physics Letters, Vol. 103, Issue 25; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
CAPTURE
CARRIERS
DESIGN
DIFFUSION
ENERGY GAP
GRAPHENE
LASERS
PERFORMANCE
POPULATION INVERSION
PUMPING
SEMICONDUCTOR MATERIALS
SURFACES
TEMPERATURE RANGE 0273-0400 K