Magnetotransport measurements of current induced effective fields in Ta/CoFeB/MgO

Journal Article · Mon Dec 23 00:00:00 EST 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4859656· OSTI ID:22253146

Zhang, Chaoliang ^[1]; Yamanouchi, Michihiko; Ikeda, Shoji ^[1]; Sato, Hideo; Fukami, Shunsuke ^[2]; Matsukura, Fumihiro; Ohno, Hideo ^[1]

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1. Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan)
2. Center for Spintronics Integrated Systems, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan)

We evaluate current-induced effective magnetic fields in perpendicularly magnetized Ta/CoFeB/MgO structures from the external magnetic field angle dependence of the Hall resistance. We confirm the presence of two components of effective fields. The dependence of their magnitudes on Ta thickness implies that both components are related to the spin current in Ta layer generated by the spin Hall effect.

• OSTI ID: 22253146
• Journal Information: Applied Physics Letters, Vol. 103, Issue 26; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
CURRENTS
HALL EFFECT
MAGNESIUM OXIDES
MAGNETIC FIELDS
SPIN
THICKNESS